型号:

RQ1A070ZPTR

RoHS:无铅 / 符合
制造商:Rohm Semiconductor描述:MOSFET P-CH 12V 7A TSMT8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
RQ1A070ZPTR PDF
标准包装 3,000
系列 -
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 12V
电流 - 连续漏极(Id) @ 25° C 7A
开态Rds(最大)@ Id, Vgs @ 25° C 12 毫欧 @ 7A,4.5V
Id 时的 Vgs(th)(最大) 1V @ 1mA
闸电荷(Qg) @ Vgs 58nC @ 4.5V
输入电容 (Ciss) @ Vds 7400pF @ 6V
功率 - 最大 1.5W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 TSMT8
包装 带卷 (TR)
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